THE CENTRAL LABORATORY OF APPLIED PHYSICS (CLAP) with PILOT PRODUCTION is a regular independent academic organization, carrying out scientific investigation, research & development work and production in the field of electronics, micro- and optoelectronics, semiconductor sensors and sensor devices and production technologies.
All basic methods of micro- and optoelectronics have been mastered in CLAP. Among them special attention is given to liquid phase and molecular beam epitaxy, metallic film deposition, photolithography and assembly and packaging of semiconductor devices.
A wide range of sensors – photo-, magneto-, thermo-, radiation sensitive and capacitance sensors, as well as sensor units are produced.
Microwave sensors and photoprobes, as well as a range of light emitting diodes are developed. Low noise Shottky field effect transistors (MESFETs) for satellite TV converters are made based on molecular beam epitaxial structures. The semiconductor components and units enjoy good markets. Over 2 million power infrared light emitting diodes for remote control have been sold in Russia, Ukraine and Turkey.
A new branch has emerged in the last decade – high temperature microelectronics based on the wide bandgap semiconductor SiC. High temperature high power high frequency SiC MESFETs, high power high temperature SiC p-n diodes and high temperature high voltage high frequency SiC p-i-n diodes have been developed based on European projects.
The branch of thermoelectric Peltier elements based cooling-heating devices is developing successfully.
The newest branch is development and industrial application of nanostructured thin films for hard and superhard coatings.
 

MEASUREMENT METHODS

  • Characterization of semiconductor materials and devices by photoluminescence, Hall effect, capacitance–voltage (C-V), deep level transient spectroscopy (DLTS), Auger electron spectroscopy (AES) and high energy electron diffraction (HEED)
  • High temperature measurements of Ohmic and Shottky contacts
  • Measurement of thermal processes in power transistors
  • Electro-optical characterization


EQUIPMENT

  • Molecular beam epitaxy with separate chambers for Si, III-V compounds and Auger analysis
  • Liquid phase epitaxy of III-V (GaAs, GaAlAs) compounds
  • Technological processing line for II-VI (CdS, CdSe) compounds
  • Equipment for wide bandgap semiconductor compounds
  • Equipment for metallization – electron beam evaporation and magnetron sputtering for Ohmic and Shottky contacts
  • Equipment for dielectric coatings
  • Photolithography
  • Complete assembly line for packages and packaging of semiconductor chips in metal-glass, metal-ceramic and plastic packages
  • Equipment for semiconductor device electrical parameter measurements
  • Printed boards and surface mounting
  • Metal machining equipment


SCIENTIFIC STAFF  - 6 Associate Professors and 12 Research Associates, 9 have PhD degree

 
Address:
 59 Sankt Petersburg Blvd, 4000 Plovdiv, Bulgaria
Phone:
 +359 32 635 019
P.O. Box:
 823
Fax:
 +359 32 632 810
Tlx:
 44 374
E-mail:
ipfban@mbox.digsys.bg