Charge carrier transport in 4H-SiC p-i-n structures at high frequency electric field; development of SiC p-i-n diode for microwave applications – INTAS Project No 01-0603 with participants Ioffe Physico-Technical Institute, Svetlana electronic devices, both in Sankt Petersburg, Russia, Research Institute Orion, Kiev, Ukraine and FORTH, Crete, Greece.

PHARE Project: BG 0102.02.02.021 Manufacture of cathodic arc deposition system for hard coatings and technology.

Sixth framework programme: Nanotechnologies, multifunctional materials and new production processes priority: Project INCO–CT–20050–16805 (RTCNANOHARD) with full title: “Strengthening the research and technological capacity in the field of nanostructured thin films, hard and super hard coatings”.

New AlGaN/GaN based heterostructures for high power, high temperature and high frequency microelectronics – a collaboration with the Ioffe Physico-Technical Institute, Sankt Petersburg, Russia.

Technology development of GaN, AlN homoepitaxial structures and investigation of their physical properties – a collaboration with the Institute of Solid State Physics and Semiconductors, Belarus Academy of Sciences.

Investigation of possibilities for manufacture of high efficiency illuminant units based on super bright III-V compound light emitting diodes – a collaboration with the Institute of Electronics, Minsk, Belarus.

Measurement of thin films by white-light scanning interferometry – a collaboration with the University of Helsinki, Finland.

Investigation of temperature dependent Hall mobility and transfer processes in n- and p-type SiC for high frequency microelectronic applications – a collaboration with the Linköping University, Sweden.